inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistors BU120 description collector-emitter sustaining voltage- :v ceo(sus) = 200v(min) applications designed for horizontal deflection output stage of ctv receivers and high voltalge, fast switching and industrial application. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-emitter voltage 400 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b base current-continuous 3.0 a p c collector power dissipation @t c =25 100 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.75 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistors BU120 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ; i b = 0 200 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 400 v v ce (sat) collector-emitter saturation voltage i c = 8a ;i b = 2.5a 3.3 v v be (sat) base-emitter saturation voltage i c = 8a ;i b = 2.5a 2.2 v i cbo collector cutoff current v cb = 400v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 7v; i c = 0 0.1 ma h fe dc current gain i c = 1a; v ce = 10v 30 120 f t current-gainbandwidth product i c = 1a; v ce = 10v;f test = 1mhz 6 mhz
|
